High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical

被引：73

作者：

Won, Seok-Jun ^{[1
,2
,3
]}

Suh, Sungin ^{[1
,3
]}

Huh, Myung Soo ^{[1
,3
]}

Kim, Hyeong Joon ^{[1
,3
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[2] Samsung Elect Co Ltd, Syst LSI Div, Adv Proc Dev Team, Yongin 449900, South Korea

[3] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 08期

关键词：

Chemical analysis; dielectric materials; electrical breakdown; MOS capacitors; SIO2; SPECTROSCOPY; FABRICATION; INTERFACE; XPS;

D O I：

10.1109/LED.2010.2049978

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recently, SiO(2) grown at low temperatures has been highlighted for a range of applications. In this letter, SiO(2) films were deposited at 280 degrees C by plasma-enhanced atomic layer deposition (ALD) using bis-diethylamino-silane and O(2) plasma. The electrical conduction mechanisms of a 38-nm-thick SiO(2) film were found to be ohmic and Fowler-Nordheim tunneling in the low-and high-voltage ranges, respectively. The electrical breakdown field of the silicon oxide films was measured at similar to 10 MV/cm. The excellent breakdown field was well explained by the fact that ALD SiO(2) has very low carbon content (< 0.5%) and does not have any oxygen deficiency and nonbridging oxygen. Compared to wet SiO(2), the increase in etch rates was attributed to the existence of strained bonds.

引用

页码：857 / 859

页数：3

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