Large room temperature Rabi-splitting in II-VI semiconductor microcavity quantum structures

被引：7
作者：
Pawlis, A [1 ]
Khartchenko, A [1 ]
Husberg, O [1 ]
As, DJ [1 ]
Lischka, K [1 ]
Schikora, D [1 ]
机构：
[1] Univ Gesamthsch Paderborn, Dept Phys, D-33098 Paderborn, Germany
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
Rabi-splitting; microcavity structure; Bragg-mirrors;
D O I：
10.1016/S0026-2692(03)00068-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Due to their large oscillator strength, ZnSe microcavities with (Zn,Cd)Se quantum wells are particularly suited to investigate the photon-exciton coupling behaviour in semiconductors. We have observed a strong coupling between the excitonic and photonic mode in a ZnSe microcavity with four (Zn,Cd)Se quantum wells and distributed Bragg-mirrors of ZnS and YF3. A very large Rabi-splitting Omega > 40 meV was observed at T = 300 K in reflection measurements as well as in photoluminescence investigations. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：439 / 442
页数：4
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