Nonadiabatic geometrical quantum gates in semiconductor quantum dots -: art. no. 052309

被引：47
作者：
Solinas, P
Zanardi, P
Zanghì, N
Rossi, F
机构：
[1] Ist Nazl Fis Nucl, I-16146 Genoa, Italy
[2] Univ Genoa, Dipartimento Fis, I-16146 Genoa, Italy
[3] Inst Sci Interchange, I-10133 Turin, Italy
[4] Ist Nazl Fis Mat, I-10129 Turin, Italy
[5] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy
来源：
PHYSICAL REVIEW A | 2003年 / 67卷 / 05期
关键词：
D O I：
10.1103/PhysRevA.67.052309
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, we study the implementation of nonadiabatic geometrical quantum gates with in semiconductor quantum dots. Different quantum information enconding (manipulation) schemes exploiting excitonic degrees of freedom are discussed. By means of the Aharanov-Anandan geometrical phase, one can avoid the limitations of adiabatic schemes relying on adiabatic Berry phase; fast geometrical quantum gates can be, in principle, implemented.
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页数：5
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