In situ characterization of SiO2 etching with second harmonic generation and ellipsometry

被引：4

作者：

Priem, A ^{[1
]}

vanHasselt, CW ^{[1
]}

Devillers, MAC ^{[1
]}

Rasing, T ^{[1
]}

机构：

[1] UNIV NIJMEGEN,MAT RES INST,NL-6525 ED NIJMEGEN,NETHERLANDS

来源：

SURFACE SCIENCE | 1996年 / 352卷

关键词：

crystalline-amorphous interfaces; ellipsometry; etching; second harmonic generation; silicon oxides;

D O I：

10.1016/0039-6028(95)01213-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The etching process of SiO2 films on Si(111) was studied by in situ second harmonic generation (SHG), linear reflectivity and ellipsometry. All measurements are very well described with one simple model, with only the etching speed as adjustable parameter. In contrast to the linear optical measurements SHG shows high interface sensitivity when the silicon is etched clean.

引用

页码：612 / 616

页数：5

共 34 条

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