Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

被引：18

作者：

Stavarache, Ionel ^{[1
]}

Lepadatu, Ana-Maria ^{[1
]}

Teodorescu, Valentin Serban ^{[1
]}

Ciurea, Magdalena Lidia ^{[1
]}

Iancu, Vladimir ^{[2
]}

Dragoman, Mircea ^{[3
]}

Konstantinidis, George ^{[4
]}

Buiculescu, Raluca ^{[5
]}

机构：

[1] Natl Inst Mat Phys, Magurele 077125, Romania

[2] Univ Politehn Bucuresti, Bucharest 060042, Romania

[3] Natl Inst Res & Dev Microtechnol, Bucharest 023573, Romania

[4] Fdn Res & Technol Hellas, Inst Elect Struct & Laser, Iraklion 70013, Greece

[5] Univ Crete, Iraklion 71003, Greece

来源：

NANOSCALE RESEARCH LETTERS | 2011年 / 6卷

关键词：

CONDUCTIVITY; COMPOSITES; TRANSPORT; CATALYST; POLYMER;

D O I：

10.1186/1556-276X-6-88

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima.

引用

页数：6

共 28 条

[1] Electronic spectrum and tunneling properties of multiwall carbon nanotubes [J].