Single-electron AND/NAND logic circuits based on a self-organized dot network

被引:21
作者
Nakajima, F [1 ]
Miyoshi, Y [1 ]
Motohisa, J [1 ]
Fukui, T [1 ]
机构
[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0608628, Japan
关键词
D O I
10.1063/1.1614845
中图分类号
O59 [应用物理学];
学科分类号
摘要
We experimentally demonstrated single-electron operations of an AND/NAND logic circuit based on a self-organized GaAs quantum-dot (QD) network fabricated by applying a selective-area metalorganic vapor-phase epitaxy technique. Single-electron logic operations using four cooperating single-electron tunneling (SET) transistors has been tested. This logic circuit has an architecture based on a binary decision diagram (BDD) using a Coulomb blockade (CB) in GaAs QDs, which is a representation of digital logic functions using directed graphs. BDD node devices consisting of two SET transistors achieved a two-way path switching operation in single-electron mode due to the CB effects which appeared complementarily in the two SET transistors at 1.9 K. We also demonstrated an AND/NAND operation in a logic circuit by integrating two BDD nodes. (C) 2003 American Institute of Physics.
引用
收藏
页码:2680 / 2682
页数:3
相关论文
共 16 条
[1]  
AKERS SB, 1978, IEEE T COMPUT, V27, P509, DOI 10.1109/TC.1978.1675141
[2]   Single-electron logic device based on the binary decision diagram [J].
Asahi, N ;
Akazawa, M ;
Amemiya, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (07) :1109-1116
[3]   Nanotechnology goals and challenges for electronic applications [J].
Bohr, MT .
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2002, 1 (01) :56-62
[4]  
Grabert H., 1992, Single Charge Tunneling
[5]   Single-electron inverter [J].
Heij, CP ;
Hadley, P ;
Mooij, JE .
APPLIED PHYSICS LETTERS, 2001, 78 (08) :1140-1142
[6]   A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon [J].
Kasai, S ;
Hasegawa, H .
IEEE ELECTRON DEVICE LETTERS, 2002, 23 (08) :446-448
[7]   Fabrication and transport characterization of GaAs quantum dots connected with quantum wires fabricated by selective area metalorganic vapor phase epitaxy [J].
Kumakura, K ;
Motohisa, J ;
Fukui, T .
PHYSICA E, 1998, 2 (1-4) :809-814
[8]   Single-electron devices and their applications [J].
Likharev, KK .
PROCEEDINGS OF THE IEEE, 1999, 87 (04) :606-632
[9]  
MOOIJ JE, 1993, 1993 INT C SOL STAT, P339
[10]   Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors [J].
Motohisa, J ;
Nakajima, F ;
Fukui, T ;
van der Wiel, WG ;
Elzerman, JM ;
De Franceschi, S ;
Kouwenhoven, LP .
APPLIED PHYSICS LETTERS, 2002, 80 (15) :2797-2799