TSC measurements in a-Ge22Se78-xBix thin films

被引：7

作者：

Yadav, S. ^{[1
]}

Kumar, D. ^{[2
]}

Pal, R. K. ^{[1
]}

Sharma, S. K. ^{[1
]}

Kumar, A. ^{[1
]}

机构：

[1] Harcourt Butler Technol Inst, Dept Phys, Kanpur 208002, Uttar Pradesh, India

[2] JSS Acad Tech Educ, Dept Phys, Noida, India

来源：

PHYSICA B-CONDENSED MATTER | 2010年 / 405卷 / 24期

关键词：

Chalcogenide glasses; Trap parameters; Thin films; THERMALLY STIMULATED CURRENTS; AMORPHOUS-SILICON; GLASSES; STATES; GAP; BI;

D O I：

10.1016/j.physb.2010.10.003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In the present paper thermally stimulated current measurements have been made in a-Ge22Se78-xBix (x = 0, 10) thin films in order to determine trap parameters such as trap depth and trap density. Trap depth has been calculated using the initial rise method proposed by Garlick and Gibson. The trap depth is found to be 0.41 and 0.30 eV for x=0 and 10, respectively. The trap density (N-t) was also calculated, which was found to be 2.08 x 10(17) and 1.48 x 10(16) cm(-3) for x = 0 and 10, respectively. The decrease in trap density on Si addition is explained in terms of the structure of the ternary alloy. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：4982 / 4985

页数：4

共 19 条

[1] THE X-RAY K ABSORPTION EDGES OF GE AND SE IN GE22SE78-XBIX GLASSES AND AMORPHOUS FILMS [J].

AGNIHOTRI, AK ;

KUMAR, A ;

NIGAM, AN .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (02) :319-324

[2] STRUCTURAL-CHANGES INDUCED BY BI DOPING IN N-TYPE AMORPHOUS (GESE3.5)100-XBIX [J].

BHATIA, KL .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 54 (1-2) :173-177

[3]

BHATIA KL, 1983, J NON-CRYST SOLIDS, V58, P151

[4] ROLE OF DOPANTS IN PRESSURE-INDUCED EFFECTS IN GLASSY GESE3.5 CONTAINING BI AND SB [J].

BHATIA, KL ;

PARTHASARATHY, G ;

GOSAIN, DP ;

GOPAL, ESR .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (06) :L63-L68

[5]

Bube R.H., 1992, Photoelectronic Properties of Semiconductors, P20

[6]

Chen R., 1981, ANAL THERMALLY STIMU, P8

[7] THERMALLY STIMULATED CURRENTS IN AMORPHOUS-SILICON [J].

FUHS, W ;

MILLEVILLE, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 98 (01) :K29-K32

[8]

GARLICK GFJ, 1948, P PHYS SOC LOND, V81, P141

[9]

GUBANOV AI, 1962, SOV PHYS-SOLID STATE, V3, P1964

[10] CRITICAL COMMENT ON A METHOD FOR DETERMINING ELECTRON TRAP DEPTHS [J].

HAAKE, CH .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1957, 47 (07) :649-652

← 1 2 →