Angular dependence of lateral growth rate on the InP (111)A,B surface by liquid-phase epitaxy

被引:0
作者
Oyama, Y
Kochiya, T
Suto, K
Nishizawa, JI
机构
[1] Tohoku Univ, Grad Sch Engn, Dept Mat Sci & Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
[2] Semicond Res Fdn, Semicond Res Inst, Sendai, Miyagi 9800862, Japan
关键词
crystal morphology; growth models; surface structure; liquid phase epitaxy; phosphide; semiconducting indium phosphide;
D O I
10.1016/S0022-0248(03)01493-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The angular dependences of the lateral growth rate are determined as a function of growth temperature in liquid-phase epitaxy (LPE) of (1 1 1)A,B InP at T-g = 450-490degreesC. From the observations of the deformation of artificially made tables after epitaxy, the lateral growth rate has shown a maximum in the < 1 1 2 > direction steps on (1 1 1)B at T-g = 450degreesC. This indicated that the kink density was high in the < 1 1 2 > direction on the InP (1 1 1)B surface. It is also shown that the anisotropy of lateral growth rate decreases as the growth temperature becomes high on (I I I)B. And isotropic lateral growth rate was observed on the (1 1 1)A surface at T-g = 450degreesC. From these results, the kink-step structures during LPE on the {1 1 1} InP surface were discussed. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:41 / 48
页数:8
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