Radiation hardness of polysiloxane scintillators analyzed by ion beam induced luminescence

被引：26

作者：

Quaranta, A. ^{[1
,3
]}

Carturan, S. ^{[2
]}

Marchi, T. ^{[3
]}

Antonaci, A. ^{[3
]}

Scian, C. ^{[2
]}

Kravchuk, V. L. ^{[4
]}

Degerlier, M. ^{[3
]}

Gramegna, F. ^{[3
]}

Maggioni, G. ^{[2
]}

机构：

[1] Univ Trent, DIMTI, I-38050 Povo, Trento, Italy

[2] Univ Padua, Lab Nazl Legnaro, I-35020 Padua, Italy

[3] Ist Nazl Fis Nucl, Lab Nazl Legnaro, I-35020 Padua, Italy

[4] Univ Bologna, Dipartimento Fis, I-40127 Bologna, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2010年 / 268卷 / 19期

关键词：

Ion beam induced luminescence; Organic scintillators; Polysiloxane; POLYMERS; IRRADIATION; DEGRADATION; CHEMISTRY;

D O I：

10.1016/j.nimb.2010.05.077

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The radiation hardness of polysiloxane based scintillators has been measured by ion beam induced luminescence (IBIL). The light intensity as a function of the irradiation fluence with an He(+) beam at 1.8 MeV (1.0 mu A/cm(2)) has been measured on undoped polymers synthesized with different amounts of phenyl units and on polysiloxanes doped with two different dye molecules (BBOT and Lumogen Violet) sensitizing the scintillation yield. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3155 / 3159

页数：5

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