Generation of coherent LO phonons in GaAs/AlGaAs MQW's by the impulsive stimulated Raman scattering

被引：0

作者：

Yee, KJ ^{[1
]}

Lim, YS ^{[1
]}

Kim, DS ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Phys, Seoul 151747, South Korea

来源：

ULTRAFAST PHENOMENA XII | 2001年 / 66卷

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on generation mechanisms of coherent LO phonons in GaAs/AlGaAs multiple quantum wells at resonant conditions. Both the forbidden and the allowed impulsive Raman scatterings are shown to generate coherent phonons, in stark contrast to bulk GaAs where the dominant generation mechanism is screening of surface fields.

引用

页码：381 / 383

页数：3

共 7 条

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