Electrical properties in high-k HfO2 capacitors with an equivalent oxide thickness of 9 Å on Ru metal electrode

被引：9
作者：
Kim, JH
Yoon, SG
Yeom, SJ
Woo, HK
Kil, DS
Roh, JS
Sohn, HC
机构：
[1] Chungnam Natl Univ, Dept Mat Sci & Engn, Taejon 305764, South Korea
[2] Hynix Semicond Inc, Ichon 467701, South Korea
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 06期
关键词：
D O I：
10.1149/1.1895285
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
HfO2 films with an EOT of 9 angstrom were deposited at 300 degrees C on Ru/TiN/SiO2/Si substrates using an atomic layer deposition technique and the electrical properties of Ru/HfO2/Ru capacitors were investigated as a function of the film thickness and annealing temperature. The dielectric constant, dielectric loss, and leakage current density at 1.0 V in the films with a thickness of 7 nm were, similar to 19, 0.9%, and 8 x 10(-7) A/cm(2), respectively. The capacitors show the stable electrical properties in a thermal treatment up to 600 degrees C. (c) 2005 The Electrochemical Society. All rights reserved.
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页码：F17 / F19
页数：3
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