A Highly Efficient 1-GHz, 15-W Power Amplifier Design Based on a 50-V LDMOS Transistor

被引:0
|
作者
Singerl, Peter [1 ]
Fager, Christian [2 ]
Wang, Ziming [1 ]
Schuberth, Christian [3 ]
Dielacher, Franz [1 ]
机构
[1] Infineon Technol Austria AG, A-9500 Villach, Austria
[2] Chalmers Univ Technol, GigaHertz Ctr, Gothenburg, Sweden
[3] Vienna Univ Technol, A-1040 Vienna, Austria
来源
2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年
关键词
RF;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a 15-W, 1-GHz harmonically tuned power amplifier (PA) with a power added efficiency (PAE) of 75%. The PA design is based on a packaged 50-V Si-LDMOS engineering sample. The PAE is maximized by an appropriate tuning of the fundamental and second harmonics, while the higher harmonics are shortened by the parasitic drain-source capacitance. The PA design is based on a simplified transistor model which is optimized for harmonically tuned PAs. The model parameters are extracted from IV- and S-parameter measurements of the packaged LDMOS device. A good agrement between the simulation and measurement results shows the accuracy of the modeling and PA design procedure.
引用
收藏
页码:1102 / 1105
页数:4
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