Characterization of sn-doped BST thin films on LaNiO3-coated Si substrate

被引：11
|
作者：
Hu, Wencheng [1 ]
Yang, Chuanren [1 ]
Liu, Xiaobo [1 ]
He, Wei [1 ]
Tang, Xianzhong [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / 01期
关键词：
D O I：
10.1007/s10854-007-9151-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Sn-doped (Ba,Sr)TiO3(BSTS) thin films have been deposited on highly (200) oriented LaNiO3(LNO) thin films by sol-gel method. The atomic force microscope (AFM) images exhibited that the dopant Sn did not decrease the crystalline grain size of BST thin films. The structure of the BST film, determined by X-ray diffraction (XRD), presented the higher intensity (110) and (200) peaks, while the latter was distinctly induced by LNO layer. Evidently, Sn-doped BST thin films on LNO/Si substrate were found to decrease the dielectric constant and the dielectric loss, which is favourable to potentially improve the figures of merits (F (D) ) of pyroelectric materials. The BSTS thin films on LNO layer also displayed an excellent leakage current property comparing with the BST thin film on Pt/Ti/SiO2/Si and LNO/Si substrates.
引用
收藏
页码：61 / 66
页数：6
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