Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

被引：0

作者：

Huang, Tongde ^{[1
]}

Axelsson, Olle ^{[1
]}

Malmros, Anna ^{[1
]}

Bergsten, Johan ^{[1
]}

Gustafsson, Sebastian ^{[1
]}

Thorsell, Mattias ^{[1
]}

Rorsman, Niklas ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci MC2, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

来源：

2015 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), VOLS 1-3 | 2015年

关键词：

AlGaN/GaN high-electron-mobility transistors; current collapse; passivation; Trapping;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Low-Pressure-Chemical-Vapor-Deposition (LPCVD) bilayer SiNx passivation scheme has been investigated and developed, which effectively suppress the current collapse in AlGaN/GaN HEMTs. Low current slump is very helpful for microwave power amplifier application. Compared to in-situ SiNx passivations by metal-organic-chemical-vapor-deposition (MOCVD) and ex-situ SiNx passivations by plasma-enhanced-chemical-vapor-deposition (PECVD), the LPCVD SiNx exhibits the quickest recovery time from double-sweep IV curves. From pulsed IV and load-pull measurements, LPCVD SiNx is also confirmed to deliver superior large signal performance. The bilayer LPCVD SiNx passivated device shows negligible current slump (<6%). These characteristics are directly reflected in the large signal operation, where HEMTs with bilayer LPCVD SiNx have highest output power (2.9 W/mm at 3 GHz).

引用

页数：3

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