Heavy Ion, High-Energy, and Low-Energy Proton SEE Sensitivity of 90-nm RHBD SRAMs

被引：64

作者：

Cannon, E. H. ^{[1
]}

Cabanas-Holmen, M. ^{[1
]}

Wert, J. ^{[1
]}

Amort, T. ^{[1
]}

Brees, R. ^{[1
]}

Koehn, J. ^{[1
]}

Meaker, B. ^{[1
]}

Normand, E. ^{[1
]}

机构：

[1] Boeing Co, Seattle, WA 98124 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 06期

关键词：

Direct ionization; proton radiation effects; radiation effects; single-event effects; single event upset; SINGLE-EVENT-UPSETS; MULTIPLE-BIT UPSETS; NM SOI SRAM;

D O I：

10.1109/TNS.2010.2086482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measure the sensitivity of different 90-nm SRAM cells to single-event upsets (SEUs) caused by heavy ions, high energy protons, and low energy protons. We discuss radiation hardened by design techniques that impact SEU sensitivity.

引用

页码：3493 / 3499

页数：7

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