Giant Piezoresistance Effects in Silicon Nanowires and Microwires

被引：115

作者：

Milne, J. S. ^{[1
]}

Rowe, A. C. H. ^{[1
]}

Arscott, S. ^{[2
]}

Renner, Ch. ^{[3
]}

机构：

[1] Ecole Polytech, CNRS, F-91128 Palaiseau, France

[2] CNRS, IEMN, UMR8520, F-59652 Villeneuve Dascq, France

[3] Univ Geneva, Dept Condensed Matter Phys, NCCR Mat Novel Elect Properties, CH-1211 Geneva 4, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 105卷 / 22期

关键词：

SYSTEMS; CHARGE;

D O I：

10.1103/PhysRevLett.105.226802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The giant piezoresistance (PZR) previously reported in silicon nanowires is experimentally investigated in a large number of depleted silicon nano-and microstructures. The resistance is shown to vary strongly with time due to electron and hole trapping at the sample surfaces independent of the applied stress. Importantly, this time-varying resistance manifests itself as an apparent giant PZR identical to that reported elsewhere. By modulating the applied stress in time, the true PZR of the structures is found to be comparable with that of bulk silicon.

引用

收藏

页数：4

相关论文

共 26 条

[1] Resistance Electric Field Dependence and Time Drift of Piezoresistive Single Crystalline Silicon Nano films [J].

Anderas, Emil ;

Vestling, Lars ;

Olsson, Jorgen ;

Katardjiev, Ilia .

PROCEEDINGS OF THE EUROSENSORS XXIII CONFERENCE, 2009, 1 (01) :80-+

[2]

[Anonymous], 2009, INT TECHNOLOGY ROADM

[3] Silicon nanowire piezoresistance: Impact of surface crystallographic orientation [J].

Barwicz, Tymon ;

Klein, Levente ;

Koester, Steven J. ;

Hamann, Hendrik .

APPLIED PHYSICS LETTERS, 2010, 97 (02)

[4] EVALUATION OF PIEZORESISTIVE COEFFICIENT VARIATION IN SILICON STRESS SENSORS USING A 4-POINT BENDING TEST FIXTURE [J].

BEATY, RE ;

JAEGER, RC ;

SUHLING, JC ;

JOHNSON, RW ;

BUTLER, RD .

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1992, 15 (05) :904-914

[5] Partial entropy in finite-temperature phase transitions [J].

Cao, Junpeng ;

Cui, Xiaoling ;

Qi, Zhang ;

Lu, Wengang ;

Niu, Qian ;

Wang, Yupeng .

PHYSICAL REVIEW B, 2007, 75 (17)

[6] Ideal metal-decorated three dimensional covalent organic frameworks for reversible hydrogen storage [J].

Choi, Yoon Jeong ;

Lee, Jung Woo ;

Choi, Jung Hoon ;

Kang, Jeung Ku .

APPLIED PHYSICS LETTERS, 2008, 92 (17)

[7] Large positive magnetoresistive effect in silicon induced by the space-charge effect [J].

Delmo, Michael P. ;

Yamamoto, Shinpei ;

Kasai, Shinya ;

Ono, Teruo ;

Kobayashi, Kensuke .

NATURE, 2009, 457 (7233) :1112-U65

[8] Electromechanical transducers at the nanoscale: Actuation and sensing of motion in nanoelectromechanical systems (NEMS) [J].

Ekinci, KL .

SMALL, 2005, 1 (8-9) :786-797

[9] GENERATION OF POSITIVE CHARGE IN SILICON DIOXIDE DURING AVALANCHE AND TUNNEL ELECTRON INJECTION [J].

FISCHETTI, MV .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2860-2879

[10] Air-bridge-structured silicon nanowire and anomalous conductivity [J].

Fujii, H ;

Kanemaru, S ;

Matsukawa, T ;

Itoh, J .

APPLIED PHYSICS LETTERS, 1999, 75 (25) :3986-3988