Design and Analysis of an E-band Power Detector in 0.13 μm SiGe BiCMOS Technology

被引：0
|
作者：
Ahamed, Raju [1 ]
Varonen, Mikko [2 ]
Parveg, Dristy [2 ]
Najmussadat, Md [1 ]
Kantanen, Mikko [2 ]
Halonen, Kari A., I [1 ]
机构：
[1] Aalto Univ, Dept Elect & Nanoengn, Espoo, Finland
[2] VTT Tech Res Ctr Finland Ltd, Espoo, Finland
来源：
2020 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2020年
基金：
芬兰科学院;
关键词：
BiCMOS; E-band; heterojunction bipolar transistor (HBT); power detector; millimeter-wave; MMIC;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a high dynamic range E-band power detector in a 0.13 mu m SiGe BiCMOS technology. In this design the Meyer topology using bipolar transistor is adopted and implemented for E-band operation. The measured detector achieves a dynamic range of 35 dB from -25 dBm to +10 dBm. It shows less than 1.6 dB offset in input power detection from 72 GHz to 82 GHz. This power detector consumes 0.6 mW of DC power and the occupied core area is 0.1 mm(2).
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页数：4
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