Negative differential capacitance in n-GaN/p-Si heterojunctions

被引：14

作者：

Kumar, Mahesh ^{[1
,2
]}

Bhat, Thirumaleshwara N. ^{[1
]}

Rajpalke, Mohana K. ^{[1
]}

Roul, Basanta ^{[1
,2
]}

Sinha, Neeraj ^{[3
]}

Kalghatgi, A. T. ^{[2
]}

Krupanidhi, S. B. ^{[1
]}

机构：

[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

[2] Bharat Elect, Cent Res Lab, Bangalore 560013, Karnataka, India

[3] Govt India, Off Principal Sci Advisor, New Delhi 110011, India

来源：

SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 05期

关键词：

GaN; MBE; Negative differential capacitance; Heterojunctions; LIGHT-EMITTING-DIODES; HETEROSTRUCTURES; MOBILITY;

D O I：

10.1016/j.ssc.2010.12.023

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Negative differential capacitance (NDC) has been observed in n-GaN/p-Si heterojunctions grown by plasma assisted molecular beam epitaxy (PAMBE). The NDC is observed at low frequencies 1 and 10 kilohertz (kHz) and disappeared at a higher testing frequency of 100 kHz. The NDC is also studied with temperature and found that it has disappeared above 323 degrees C. Current-Voltage (I-V) characteristics of n-GaN /p-Si heterojunction were measured at different temperatures and are attributed to the space-charge-limited current (SCLC). A simple model involving two quantum states is proposed to explain the observed NDC behavior. (C) 2010 Elsevier Ltd. All rights reserved.

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收藏

页码：356 / 359

页数：4

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