Properties of the SiC/Si structure prepared by rapid thermal annealing of amorphous hydrogenated carbon layers deposited on crystaline silicon

被引：0
|
作者：
Georgiev, SS
Beshkov, G
Sueva, D
Manolov, E
机构：
[1] Bulgarian Acad Sci, Inst Solid State Phys, Sofia 1784, Bulgaria
[2] Univ Sofia, Fac Phys, BU-1126 Sofia, Bulgaria
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2005年 / 7卷 / 01期
关键词：
carbon layer; Raman spectra; heterostructure; electrical properties;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the SiC interface layer formation by the rapid thermal annealing (RTA) of a-C:H/c-Si (p-type) structures at 800, 1000 and 1200 degrees C for 3 minutes. The a-C:H layers, about 120 nm thick, were deposited by HF PECVD from methanol at a substrate temperature of 340 degrees C. The creation of a SiC interface layer was established by Raman spectroscopy. I-V and C-V measurements showed the presence of a heterojunction.
引用
收藏
页码：373 / 376
页数：4
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