Growth, modulation and electronic properties of Al2O3-coatings SiC nanotubes via simple heating evaporation

被引：16

作者：

Cui, H. ^{[1
]}

Zhou, J. ^{[2
]}

Yang, G. Z. ^{[1
]}

Sun, Y. ^{[1
]}

Wang, C. X. ^{[1
]}

机构：

[1] Sun Yat Sen Zhongshan Univ, State key Lab Optoelect Mat & Technol, Inst Optoelect & Funct Composite Mat, Sch Phys Sci & Engn, Guangzhou 510275, Guangdong, Peoples R China

[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Coll Optoelect Sci & Technol, Wuhan 430074, Peoples R China

来源：

CRYSTENGCOMM | 2011年 / 13卷 / 03期

关键词：

SILICON-CARBIDE NANOWIRES; BORON-NITRIDE;

D O I：

10.1039/c0ce00313a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report a simple, efficient method to in situ grow the Al2O3 coating on the surface of single-crystalline tubular SiC nanostructures with controllable morphology, size and population density. The nanostructures are fabricated by heating evaporation Al powders and C-60 on the Si substrates. By varying the reaction temperature, we can conveniently control the size and density of Al2O3 nanoparticles coating. Moreover, the ultrathin Al2O3 coating is also achieved by decreasing the quantity of Al source. The electrical transport measurement from single nanostructure is carried out to further confirm the excellent electrical insulation of ultrathin Al2O3 coating. This result contributes to the development of SiC based-nanodevices, as well as nanocomposites.

引用

页码：902 / 906

页数：5

共 35 条

[21] Direct growth of core-shell SiC-SiO2 nanowires and field emission characteristics [J].