Irradiation-induced microstructure damage in He-irradiated 3C-SiC at 1000°C

被引：36
作者：
Li, Bingsheng [1 ,2 ]
Liu, Huiping [2 ]
Shen, Tielong [2 ]
Xu, Lijun [2 ]
Wang, Jie [1 ]
Zhao, Fuqiang [3 ]
Peng, Dingping [3 ]
Li, Junhan [3 ]
Sheng, Yanbin [2 ]
Xiong, Anli [3 ]
机构：
[1] Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Sichuan, Peoples R China
[2] Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Gansu, Peoples R China
[3] Southwest Univ Sci & Technol, Sch Natl Def Sci & Technol, Mianyang 621010, Sichuan, Peoples R China
来源：
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2020年 / 40卷 / 04期
基金：
中国国家自然科学基金;
关键词：
3C-SiC; He irradiation; Microstructure; Stacking faults; High temperature; MECHANICAL-PROPERTIES; SILICON-CARBIDE; HEAVY-ION; COMPOSITES; RAMAN; IMPLANTATION; CHALLENGES; EVOLUTION; CLUSTERS; CAVITIES;
D O I：
10.1016/j.jeurceramsoc.2019.11.026
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The effect of the high-temperature helium irradiation on microstructural evolution of 3C-SiC was investigated by the combination of Raman spectroscopy, conventional transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). 3C-SiC wafers were irradiated with 130 keV He+ ions at fluences of 2 x 10(16) He+/cm(2), 4 x 10(16) He+/cm(2) and 2 x 10(17) He+/cm(2) at 1000 degrees C. Helium bubbles, dislocation loops, and their interaction with the stacking faults were focused on and characterized by TEM. Helium bubbles preferentially nucleate and grow on stacking faults. Bubble links on the (100) plane in 3C-SiC are formed. In addition, stacking faults can effectively trap irradiation-induced lattice defects to enhance their recovery. The type of irradiation -induced lattice defects and elemental distribution are also investigated. The research results are valuable for the 3C-SiC used in the advanced nuclear energy systems.
引用
收藏
页码：1014 / 1022
页数：9
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