The influence of gas pressure and bias current on the crystallinity of highly boron-doped diamond films

被引：11

作者：

Jia Fu-chao ^{[1
,2
]}

Bai Yi-zhen ^{[1
,2
]}

Qu Fang ^{[1
,2
]}

Sun Jian ^{[1
,2
]}

Zhao Ji-jun ^{[1
,2
]}

Jiang Xin ^{[3
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China

[2] Dalian Univ Technol, Key Lab Mat Modificat Laser Ion & Electron Beams, Minist Educ, Dalian 116024, Peoples R China

[3] Univ Siegen, Inst Mat Engn, D-57076 Siegen, Germany

来源：

NEW CARBON MATERIALS | 2010年 / 25卷 / 05期

关键词：

Highly boron-doped diamond film; Gas pressures; Bias currents; HFCVD; SEM; XRD; Raman; CVD DIAMOND; THIN-FILMS; GROWTH; DEPOSITION; STRESS;

D O I：

10.1016/S1872-5805(09)60039-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly boron-doped diamond (BDD) films were deposited by hot filament chemical vapor deposition on a silicon substrate with different gas pressures and bias currents. The surface morphology and the structure of the diamond films were analyzed by scanning electron microscopy, Raman spectroscopy, and X-ray diffraction. Results indicated that the quality of the highly BDD films tended to be improved when the gas pressure decreased from 3 to 1.5 kPa, whereas they showed an opposite trend with a further decrease of the gas pressure from 1.5 to 0.5 kPa. An appropriate bias current (3 A) was favorable in improving the qualities of the diamond films and a higher bias current led to an increase of the non-diamond phase in the films.

引用

页码：357 / 361

页数：5

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