TISI2 FORMATION AND MECHANISM THROUGH ULTRA-THIN AL2O3 INTERMEDIATION

被引：0

作者：

Hao, Peilin ^{[1
]}

Li, Ming ^{[1
]}

Zhang, Bingxin ^{[1
]}

Gao, Siyang ^{[1
]}

An, Xia ^{[1
]}

Huang, Ru ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Key Lab Microelect Devices & Circuits, Beijing 100871, Peoples R China

来源：

2018 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE (CSTIC) | 2018年

关键词：

TITANIUM; GROWTH; FILMS;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, TiSi2 formation through ultra-thin Al2O3 intermediation is experimentally demonstrated and the mechanism for solid-state phase reaction is studied. By the intermediation of ultra-thin buffer layer, a thinner layer of amorphous Ti-silicide was obtained under the same annealing condition. It's found that the Si atomic diffusion process is almost retarded by the buffering layer while Ti atoms can still diffuse into Si substrate through the oxygen exchange effect between TiO2 and Al2O3. Due to lack of nucleation centers in the Ti/Al2O3/Si system, only amorphous C49 phase TiSi2 was formed with a Ti-rich silicide phase formed at the top surface. In the normal Ti/Si system, however, C54 phase can be obtained at high temperature.

引用

页数：3

共 8 条

[1]

Adusumilli P, 2016, IEEE S VLSI TECHN IEEE S VLSI TECHN, P68

[2] GROWTH AND STRUCTURE OF TITANIUM SILICIDE PHASES FORMED BY THIN TI FILMS ON SI CRYSTALS [J].