The kinetics of the reaction of silyl radicals (SiH3) with H2O2 and O-2 were studied using time-resolved infrared diode laser absorption spectroscopy. The rate constant SiH3 + H2O2 at 298 K was determined to be 9.8 x 10(-12) cm(3) molecule(-1) s(-1). This rate constant is independent of temperature over the range 298-573 K. The yield of OH products was quantified by reaction with CO to produce CO2, which was detected by infrared spectroscopy. The branching ratio of the SiH3 + H2O2 reaction into OH product channels was estimated to be <0.05 at 298 K. Similar experiments on the SiH3 + O-2 reaction indicated an OH product branching ratio of 0.076 +/- 0.04 at 298 K.