Influence of Na in Cu2SnS3 film on its physical properties and photovoltaic performances

被引：24
作者：
Chantana, Jakapan [1 ]
Uegaki, Hikaru [1 ]
Minemoto, Takashi [1 ]
机构：
[1] Ritsumeikan Univ, Dept Elect & Elect Engn, Kusatsu, Shiga 5258577, Japan
来源：
THIN SOLID FILMS | 2017年 / 636卷
关键词：
Copper tin sulfide; Thin-film solar cell; Sodium; Energy-dispersive X-ray spectrometry; Time-resolved photoluminescence; Raman scattering measurement; CU(IN; GA)SE-2; SOLAR-CELLS; THIN-FILM; EFFICIENCIES; IMPROVEMENT;
D O I：
10.1016/j.tsf.2017.06.044
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Cu2SnS3 (CTS) is the promising absorber of thin-film solar cell due to earth-abandant and non-toxic element. Influence of sodium (Na) on physical properties of CTS layers is investigated. In this work, CTS films with different Na concentrations are fabricated by sulfurizations of NaF/Cu/SnS2 and Cu/SnS2 stacked precursors on both sodalime glass (SLG) and quartz substrates. The Na from NaF precursor layer and SLG substrate is introduced into CTS films. It is demonstrated that Na in forms of NaxCuSnS3 (x: 0.5-1.0) and Na2S is segregated in the large grain regions of CTS films. The crystal grains are significantly enlarged by Na addition into CTS films. As a result, the carrier lifetime, examined by time-resolved photoluminescence, is enhanced. From Raman scattering measurement, CTS films possess the peaks of monoclinic CTS structure. In addition, Cu2Sn3S7 and NaxCuSnS3 peaks are clearly observed in CTS films with high Na content. Finally, conversion efficiency of CTS thin-film solar cell is strongly enhanced from 0.61 (without Na addition) to 2.01% (with Na addition), mainly attributed to the increases in open-circuit voltage and fill factor through the decrease in carrier recombination. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：431 / 437
页数：7
相关论文
共 30 条
[1]   Sulfurization temperature dependences of photovoltaic properties in Cu2SnS3-based thin-film solar cells [J].
Aihara, Naoya ;
Kanai, Ayaka ;
Kimura, Kazuki ;
Yamada, Manami ;
Toyonaga, Kotoba ;
Araki, Hideaki ;
Takeuchi, Akiko ;
Katagiri, Hironori .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
[2]   Fabrication of Cu2SnS3 thin films by sulfurization of evaporated Cu-Sn precursors for solar cells [J].
Aihara, Naoya ;
Araki, Hideaki ;
Takeuchi, Akiko ;
Jimbo, Kazuo ;
Katagiri, Hironori .
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 7-8, 2013, 10 (7-8) :1086-1092
[3]   Thin film solar cells based on the ternary compound Cu2SnS3 [J].
Berg, Dominik M. ;
Djemour, Rabie ;
Guetay, Levent ;
Zoppi, Guillaume ;
Siebentritt, Susanne ;
Dale, Phillip J. .
THIN SOLID FILMS, 2012, 520 (19) :6291-6294
[4]   Raman analysis of monoclinic Cu2SnS3 thin films [J].
Berg, Dominik M. ;
Djemour, Rabie ;
Guetay, Levent ;
Siebentritt, Susanne ;
Dale, Phillip J. ;
Fontane, Xavier ;
Izquierdo-Roca, Victor ;
Perez-Rodriguez, Alejandro .
APPLIED PHYSICS LETTERS, 2012, 100 (19)
[5]   Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells [J].
Brammertz, G. ;
Buffiere, M. ;
Oueslati, S. ;
ElAnzeery, H. ;
Ben Messaoud, K. ;
Sahayaraj, S. ;
Koeble, C. ;
Meuris, M. ;
Poortmans, J. .
APPLIED PHYSICS LETTERS, 2013, 103 (16)
[6]   Introduction of Na into Cu2SnS3 thin film for improvement of its photovoltaic performances [J].
Chantana, Jakapan ;
Suzuki, Koichi ;
Minemoto, Takashi .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2017, 168 :207-213
[7]   Investigation of Cu(In,Ga)Se2 absorber by time-resolved photoluminescence for improvement of its photovoltaic performance [J].
Chantana, Jakapan ;
Hironiwa, Daisuke ;
Watanabe, Taichi ;
Teraji, Seiki ;
Kawamura, Kazunori ;
Minemoto, Takashi .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2014, 130 :567-572
[8]   Imaging and phase identification of Cu2ZnSnS4 thin films using confocal Raman spectroscopy [J].
Cheng, A-J ;
Manno, M. ;
Khare, A. ;
Leighton, C. ;
Campbell, S. A. ;
Aydil, E. S. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2011, 29 (05)
[9]  
Chirila A, 2013, NAT MATER, V12, P1107, DOI [10.1038/NMAT3789, 10.1038/nmat3789]
[10]  
Chirila A, 2011, NAT MATER, V10, P857, DOI [10.1038/nmat3122, 10.1038/NMAT3122]
123