Effects of first rapid thermal annealing temperature on Co silicide formation

被引：5
作者：
Peng, HJ
Shen, ZX
Lim, EH
Lai, CW
Liu, R
Wee, ATS
Sameer, A
Dai, JY
Zhang, BC
Zheng, JZ
机构：
[1] Natl Univ Singapore, Dept Phys, Singapore 119260, Singapore
[2] Chartered Semicond Mfg Ltd, Singapore 738406, Singapore
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 08期
关键词：
D O I：
10.1016/S0038-1101(03)00008-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cobalt silicide formation has been shown to be improved by a reactive Ti capping layer. We investigated the effects of the first rapid thermal anneal (RTA1) temperature on the silicidation mechanism and COSi2 film properties. It was found that a higher RTA1 temperature results in lower sheet resistance, a smoother COSi2/Si interface and better film thermal stability. The improved thermal stability may be explained by the smoother COSi2/Si interface at higher RTA1 temperature. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1249 / 1253
页数：5
相关论文
共 13 条
  • [1] Cobalt silicide thermal stability: from blanket thin film to submicrometer lines
    Alberti, A
    La Via, F
    Grimaldi, M
    Ravesi, S
    [J]. SOLID-STATE ELECTRONICS, 1999, 43 (06) : 1039 - 1044
  • [2] Byun JS, 1996, MATER RES SOC SYMP P, V402, P167
  • [3] Cardenas J, 1996, MATER RES SOC SYMP P, V402, P155
  • [4] Formation and stability of silicides on polycrystalline silicon
    Colgan, EG
    Gambino, JP
    Hong, QZ
    [J]. MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1996, 16 (02) : 43 - 96
  • [5] The influence of Ti capping layers on CoSi2 formation
    Detavernier, C
    Van Meirhaeghe, RL
    Cardon, F
    Donaton, RA
    Maex, K
    [J]. MICROELECTRONIC ENGINEERING, 2000, 50 (1-4) : 125 - 132
  • [6] The thermal stability of CoSi2 on polycrystalline silicon:: The effect of silicon grain size and metal thickness
    Gambino, JP
    Colgan, EG
    Domenicucci, AG
    Cunningham, B
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (04) : 1384 - 1389
  • [7] Salicides: materials, scaling and manufacturability issues for future integrated circuits - (invited)
    Kittl, JA
    Shiau, WT
    Hong, QZ
    Miles, D
    [J]. MICROELECTRONIC ENGINEERING, 2000, 50 (1-4) : 87 - 101
  • [8] Self-aligned CoSi2 for 0.18 μm and below
    Maex, K
    Lauwers, A
    Besser, P
    Kondoh, E
    de Potter, M
    Steegen, A
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (07) : 1545 - 1550
  • [9] MAEX K, 1993, MAT SCI ENG R, V11, P53
  • [10] Thermal stability of CoSi2 film for CMOS salicide
    Ohguro, T
    Saito, M
    Morifuji, E
    Yoshitomi, T
    Morimoto, T
    Momose, HS
    Katsumata, Y
    Iwai, H
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (11) : 2208 - 2213
12