High-Index fluoride materials for 193 nm immersion lithography

被引:0
|
作者
Nawata, Teruhiko [1 ]
Inui, Yoji [1 ]
Masada, Isao [1 ]
Nishijima, Eiichi [1 ]
Mabuchi, Toshiro [1 ]
Mochizuki, Naoto [1 ]
Satoh, Hiroki [2 ]
Fukuda, Tsuguo [2 ]
机构
[1] Tokuyama Corp, Shibuya Ku, 3-3-1 Shibuya, Tokyo 1508383, Japan
[2] Tohoku Univ, IMRAM, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源
OPTICAL MICROLITHOGRAPHY XX, PTS 1-3 | 2007年 / 6520卷
关键词
BaLiF3; high index; immersion lithography; czochralski; single crystal;
D O I
10.1117/12.711045
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
BaLiF3 single crystal has been studied as the lens material for the candidate of the next generation high index immersion lithography system. Although the refractive index of BaLiF3 is 1.64 at 193nm which is not sufficient for the requirement, other optical properties such as 193nm transparency and laser durability might fulfill the requirement, and intrinsic birefringence is relatively lower than other candidate materials. It is estimated that the cause of scattering in the BaLiF3 crystal is aggregation of excess LiF component. The special annealing process to eliminate excess LiF component was applied to improve the transparency. The internal transparency was improved to more than 97%/cm by optimizing growth conditions and annealing conditions.
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页数:9
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