A simple route to synthesize nanocrystalline TiO2 films at room temperature

被引：6

作者：

Ding, Wanyu ^{[1
,2
,3
]}

Ju, Dongying ^{[4
]}

Chai, Weiping ^{[1
,2
]}

机构：

[1] Engn Res Ctr Optoelect Mat & Devices, Educ Dept Liaoning Prov, Dalian 116028, Peoples R China

[2] Dalian Jiaotong Univ, Sch Mat Sci & Engn, Dalian 116028, Peoples R China

[3] Dalian Univ Technol, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China

[4] Saitama Inst Technol Fukaya, Dept Mat Sci & Engn, Saitama 3690293, Japan

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 14期

关键词：

Thin films; Crystal growth; Atomic force microscopy; THIN-FILMS; SOL-GEL; PRECURSOR; PRESSURE;

D O I：

10.1016/j.matlet.2010.04.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

At room temperature, TiO2 films were deposited by direct current pulse magnetron sputtering. Varying the O-2/Ar flow ratio, TiO2 films with different crystalline structures and surface morphologies were obtained. X-ray diffraction spectra and atomic force microscopy showed TiO2 films mainly existed as amorphous and crystalline structures when the O-2/Ar flow ratio was less and more than 6/14, respectively. With these results, a critical point was found at O-2/Ar = 6/14. The film growth behavior was controlled by the shadowing effect and the mixture of crystallographic orientation and grain growth effects, when the O-2/Ar flow ratio was less and more than the critical point, respectively. The present work reveals a simple way to prepare the high quality anatase phase TiO2 films at room temperature, as well as the growth mechanism behind it. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1634 / 1637

页数：4

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