A hysteresis model for planar Hall effect in thin films

被引：0
作者：
Chang, CR [1 ]
机构：
[1] Natl Taiwan Univ, Dept Phys, Taipei, Taiwan
来源：
IEEE TRANSACTIONS ON MAGNETICS | 2000年 / 36卷 / 04期
关键词：
anisotropy; coercivity; coherent rotation; magnetoresistance; nucleation;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the single-domain theory, hysteresis model of magnetoresistance ratio of magnetic thin films has been studied with different current-voltage configurations. Influence of the distribution of easy axes on the magnetoresistance was also studied and results indicated that the peak value of magnetoresistanee does not occur at coercivity It also suggested that both the multidomain and nonuniform current reduce the MR ratio.
引用
收藏
页码：1214 / 1217
页数：4
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