Low temperature transport of n-type gallium nitride

被引：0
|
作者：
Chong, G [1 ]
Reed, MA [1 ]
Gaffey, B [1 ]
Gheriasmova, M [1 ]
Mitev, PH [1 ]
Guido, LJ [1 ]
机构：
[1] Yale Univ, Dept EE, New Haven, CT 06520 USA
来源：
2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS | 2000年
关键词：
D O I：
10.1109/ISCS.2000.947202
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We measured the electrical conductivity of 1-2 mum thick n-type intentionally and unintentionally doped gallium nitride samples from 1.5 to 290 K. Room-temperature Hall measurements show carrier densities in the range of 6.6 x 10(16) to 3.7 x 10(18) cm(-3), and mobility values from 543 to 261 cm(2)/V-sec over this carrier density range. Hopping is among impurity sites, and the hopping distance increases with decreasing doping concentration for the silicon-doped samples.
引用
收藏
页码：479 / 484
页数：6
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