Luminescence of native-defect p-type ZnO

被引：13
作者：
Georgobiani, AN
Kotlyarevskii, MB
Kidalov, VV
Lepnev, LS
Rogozin, IV
机构：
[1] Russian Acad Sci, Lebedev Inst Phys, Moscow 117924, Russia
[2] Azov Reg Inst Management, Berdyansk, Ukraine
[3] Pedagog Inst, Berdyansk, Ukraine
来源：
INORGANIC MATERIALS | 2001年 / 37卷 / 11期
基金：
俄罗斯基础研究基金会;
关键词：
Heat Treatment; Inorganic Chemistry; Metal Atom; Photoluminescence Spectrum; Hole Concentration;
D O I：
10.1023/A:1012581221305
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
p-Type ZnO layers with a resistivity of similar to 10(2) Omega cm, hole mobility of 23 cm(2)/(Vs), and hole concentration of 10(15) cm(-3) were grown by radical-beam getter epitaxy, a process involving heat treatment of II-VI crystals in a flow of chalcogen atoms (radicals) and gettering of metal atoms from the crystal bulk. The effect of native defects on the photoluminescence spectra of the layers was studied. The dominant bands in the spectra, those at 370.2 and 400 nm, were attributed to the V-Zn(x) and V-O(. .) vacancies.
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收藏
页码：1095 / 1098
页数：4
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