Metallization contacts to nonpolar a-plane n-type GaN

被引：58

作者：

Kim, Hyunsoo ^{[1
]}

Lee, Sung-Nam ^{[1
]}

Park, Yongjo ^{[1
]}

Kwak, Joon Seop ^{[2
]}

Seong, Tae-Yeon ^{[3
]}

机构：

[1] Samsung Elect Mech Co, Opto Syst Lab, Suwon 443743, South Korea

[2] Sunchon Natl Univ, Dept Mat Sci & Met Engn, Choongnam 540742, South Korea

[3] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 03期

关键词：

D O I：

10.1063/1.2963492

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the electrical characteristics of metallization contacts to nonpolar a-plane and polar c-plane n-type GaN. Pd Schottky diodes and x-ray photoemission spectroscopy measurements show that the Schottky barrier height of the a-plane GaN is lower than that of the c-plane GaN by 0.24 and 0.30 eV, respectively. Ti/Al Ohmic contacts to the a-plane n-GaN produce lower contact resistivity than that of the c-plane samples when annealed at 500 degrees C. However, Ti/Al contacts to the c-plane and a-plane GaN show opposite electrical behavior when annealed at temperatures above 500 degrees C, which is attributed to the absence of polarization-induced surface charges for a-plane GaN.

引用

页数：3

共 14 条

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