Study of As50Se50 thin film photodarkening induced by multiple wavelength beams

被引：0

作者：

Palka, K. ^{[1
]}

Vlcek, M. ^{[1
]}

Mistrik, J. ^{[2
]}

机构：

[1] Univ Pardubice, Dept Gen & Inorgan Chem, Pardubice, Czech Republic

[2] Univ Pardubice, Inst Appl Phys & Math, Pardubice, Czech Republic

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2011年 / 13卷 / 11-12期

关键词：

As-Se; Thin Films; Photodarkening; PULSED-LASER DEPOSITION; CHALCOGENIDE GLASSES; PHOTOINDUCED CHANGES;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper deals with study of photodarkening induced in chalcogenide glass thin films of composition As50Se50. The kinetics of photoinduced changes under the exposures to a band gap monochromatic beam of LED diode, as well as to beams with energy higher and lower than band gap value, were measured and discussed. Mathematical expression describing the time dependences of photodarkening was established. Related structural changes were studied using Raman spectroscopy as well.

引用

页码：1510 / 1513

页数：4

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