Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon

被引：7

作者：

Bai, Feng ^{[1
,2
]}

Li, Hong-Jin ^{[1
,2
]}

Huang, Yuan-Yuan ^{[1
,4
]}

Fan, Wen-Zhong ^{[1
,2
]}

Pan, Huai-Hai ^{[1
,2
]}

Wang, Zhuo ^{[3
]}

Wang, Cheng-Wei ^{[1
,2
]}

Qian, Jing ^{[1
,2
]}

Li, Yang-Bo ^{[1
,2
]}

Zhao, Quan-Zhong ^{[1
]}

机构：

[1] Acad Sinica, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China

[4] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2016年 / 662卷

基金：

中国国家自然科学基金;

关键词：

Amorphization; Silicon; Femtosecond laser; Polarization effect; AMORPHOUS-SILICON; INDUCED CRYSTALLIZATION; THIN-FILMS; RAMAN-SPECTROSCOPY; VOLUME FRACTION; SI; PULSES; IRRADIATION; ABLATION;

D O I：

10.1016/j.cplett.2016.08.080

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：102 / 106

页数：5

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