Polarization effects in femtosecond laser induced amorphization of monocrystalline silicon

被引：6
|
作者：
Bai, Feng [1 ,2 ]
Li, Hong-Jin [1 ,2 ]
Huang, Yuan-Yuan [1 ,4 ]
Fan, Wen-Zhong [1 ,2 ]
Pan, Huai-Hai [1 ,2 ]
Wang, Zhuo [3 ]
Wang, Cheng-Wei [1 ,2 ]
Qian, Jing [1 ,2 ]
Li, Yang-Bo [1 ,2 ]
Zhao, Quan-Zhong [1 ]
机构：
[1] Acad Sinica, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200240, Peoples R China
[4] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
来源：
CHEMICAL PHYSICS LETTERS | 2016年 / 662卷
基金：
中国国家自然科学基金;
关键词：
Amorphization; Silicon; Femtosecond laser; Polarization effect; AMORPHOUS-SILICON; INDUCED CRYSTALLIZATION; THIN-FILMS; RAMAN-SPECTROSCOPY; VOLUME FRACTION; SI; PULSES; IRRADIATION; ABLATION;
D O I：
10.1016/j.cplett.2016.08.080
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have used femtosecond laser pulses to ablate monocrystalline silicon wafer. Raman spectroscopy and X-ray diffraction analysis of ablation surface indicates horizontally polarized laser beam shows an enhancement in amorphization efficiency by a factor of 1.6-1.7 over the circularly polarized laser ablation. This demonstrates that one can tune the amorphization efficiency through the polarization of irradiation laser. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：102 / 106
页数：5
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