Femtosecond laser-induced sub-wavelength plasma inside dielectrics: I. Field enhancement

被引:4
|
作者
Ardaneh, Kazem [1 ]
Meyer, Remi [1 ]
Hassan, Mostafa [1 ]
Giust, Remo [1 ]
Morel, Benoit [1 ]
Couairon, Arnaud [2 ]
Bonnaud, Guy [3 ]
Courvoisier, Francois [1 ]
机构
[1] Univ Bourgogne Franche Comte, CNRS, FEMTO ST Inst, 15B Ave Montboucons, F-25030 Besancon, France
[2] Inst Polytech Paris, Ecole Polytech, CNRS, CPHT, Route Saclay, F-91128 Palaiseau, France
[3] Univ Paris Saclay, Ctr Paris Saclay, DRF, CEA, F-91191 Gif Sur Yvette, France
基金
欧洲研究理事会;
关键词
ROUGH SURFACES; SOLID TARGETS; ABSORPTION; INTENSITY; PULSES; REFLECTIVITY; GENERATION; MIRRORS; ANGLE;
D O I
10.1063/5.0086708
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
The creation of high-energy-density (greater than or similar to 10(6) joules per cm(3)) over-critical plasmas in a large volume has essential applications in the study of warm dense matter, being present in the hot cores of stars and planets. It was recently shown that femtosecond Bessel beams enable creating over-critical plasmas inside sapphire with sub-wavelength radius and several tens of micrometers in length. Here, the dependence of field structure and absorption mechanism on the plasma density transverse profile are investigated by performing self-consistent Particle-In-Cell (PIC) simulations. Two limiting cases are considered: one is a homogeneous step-like profile that can sustain plasmon formation, and the second is an inhomogeneous Gaussian profile, where resonance absorption occurs. Comparing experimental absorption measures to analytical predictions allows determining the plasma parameters used in PIC simulations. The PIC simulation results are in good agreement with experimental diagnostics of total absorption, near-field fluence distribution, and far-field radiation pattern. We show that in each case, an ambipolar field forms at the plasma surface due to the expansion of the hot electrons and that electron sound waves propagate into the over-critical region. Published under an exclusive license by AIP Publishing.
引用
收藏
页数:12
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