Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films

被引：40

作者：

Profijt, H. B. ^{[1
]}

van de Sanden, M. C. M. ^{[1
]}

Kessels, W. M. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 02期

关键词：

DEPOSITION; IONS;

D O I：

10.1149/2.024202esl

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Substrate biasing has been implemented in a remote plasma atomic layer deposition (ALD) reactor, enabling control of the ion energy up to 260 eV. For TiO2 films deposited from Ti(Cp-Me)(NMe2)(3) and O-2 plasma it is demonstrated that the crystalline phase can be tailored by tuning the ion energy. Rutile TiO2 was obtained at 200 and 300 degrees C, typically yielding amorphous and anatase films without biasing. Aspects such as film mass density, [O]/[Ti] ratio and growth per cycle under biased conditions are addressed. The results demonstrate that substrate biasing is a viable method for ALD to tailor ultra-thin film properties. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.024202esl] All rights reserved.

引用

页码：G1 / G3

页数：3

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