Demonstration of enhanced optical polarization for improved deep ultraviolet light extraction in coherently grown semipolar Al0.83Ga0.17N/AlN on ZnO substrates

被引：1

作者：

Ueno, Kohei ^{[2
]}

Kobayashi, Atsushi ^{[1
]}

Ohta, Jitsuo ^{[1
]}

Oshima, Masaharu ^{[2
,3
]}

Fujioka, Hiroshi ^{[1
,3
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan

[3] Japan Sci & Technol Corp, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 12期

关键词：

FILMS; PARAMETERS; EMISSION;

D O I：

10.1063/1.3641876

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown a semipolar Al0.83Ga0.17N/AlN heterostructure on ZnO (1 (1) over bar 02) substrates and investigated the optical polarization characteristics of the near-band-edge (NBE) emission of Al0.83Ga0.17N experimentally and theoretically. Reciprocal space mapping measurements revealed that AlN is fully relaxed with respect to ZnO, and Al0.83Ga0.17N grows coherently in both of the in-plane orthogonal directions on AlN. The NBE emissions of coherently grown Al0.83Ga0.17N (1 (1) over bar 02) at 5.4 eV were clearly polarized with E parallel to X-2. The polarization ratio of the surface emission was as high as -0.66 at room temperature. This phenomenon is consistent with a large crystal splitting energy, which was clarified by theoretical investigations based on the k . p method. (C) 2011 American Institute of Physics. [doi:10.1063/1.3641876]

引用

页数：3

共 20 条

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