Interfacial reactions of eutectic Sn3.5Ag and pure tin solders with Cu substrates during liquid-state soldering

被引:54
|
作者
Yang, Ming [1 ]
Li, Mingyu [1 ,2 ]
Wang, Chunqing [2 ]
机构
[1] Shenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
[2] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R China
关键词
Intermetallics; miscellaneous; Texture; Crystal growth; Joining; Microstructure; LEAD-FREE SOLDERS; SN INTERMETALLIC COMPOUND; MECHANICAL-PROPERTIES; WETTING REACTION; AG SOLDER; GROWTH; ALLOYS; NI; METALLIZATION; DISSOLUTION;
D O I
10.1016/j.intermet.2012.02.023
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The growth behaviors of the intermetallic compounds (IMCs) formed at the eutectic Sn3.5Ag/polycrystalline Cu and pure Sn/polycrystalline Cu interfaces are comparatively studied based on an experiment in which the liquid solder is removed before the end of soldering. This removal of the solder allows for the capture and visualization of the interfacial IMCs formed during liquid-state soldering and avoids the influence of Cu6Sn5 precipitated from the solder matrix during cooling. The results show that round, scallop-type Cu6Sn5 grains with a strong texture form at the molten solder/Cu interface and that their growth is controlled more by grain boundary (GB) diffusion at the beginning of the reaction followed by volume diffusion, whereas the growth of Cu3Sn is only volume-diffusion-controlled. In addition, in contrast to the predictions of some studies, Ag does not inhibit interfacial IMC growth. Instead, by changing the interfacial energy between the molten solder and the interfacial IMC, the addition of Ag affects the growth orientation and coarsening behavior of interfacial Cu6Sn5 grains. These changes lead to more Cu6Sn5 GBs at the interface and therefore greater IMC formation and Cu consumption in the Sn3.5Ag/Cu reaction than in the Sn/Cu reaction under the same reflow conditions. (c) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:86 / 94
页数:9
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