Interfacial reactions of eutectic Sn3.5Ag and pure tin solders with Cu substrates during liquid-state soldering
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作者:
Yang, Ming
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Shenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R ChinaShenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
Yang, Ming
[1
]
Li, Mingyu
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机构:
Shenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R ChinaShenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
Li, Mingyu
[1
,2
]
Wang, Chunqing
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Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R ChinaShenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
Wang, Chunqing
[2
]
机构:
[1] Shenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
[2] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R China
The growth behaviors of the intermetallic compounds (IMCs) formed at the eutectic Sn3.5Ag/polycrystalline Cu and pure Sn/polycrystalline Cu interfaces are comparatively studied based on an experiment in which the liquid solder is removed before the end of soldering. This removal of the solder allows for the capture and visualization of the interfacial IMCs formed during liquid-state soldering and avoids the influence of Cu6Sn5 precipitated from the solder matrix during cooling. The results show that round, scallop-type Cu6Sn5 grains with a strong texture form at the molten solder/Cu interface and that their growth is controlled more by grain boundary (GB) diffusion at the beginning of the reaction followed by volume diffusion, whereas the growth of Cu3Sn is only volume-diffusion-controlled. In addition, in contrast to the predictions of some studies, Ag does not inhibit interfacial IMC growth. Instead, by changing the interfacial energy between the molten solder and the interfacial IMC, the addition of Ag affects the growth orientation and coarsening behavior of interfacial Cu6Sn5 grains. These changes lead to more Cu6Sn5 GBs at the interface and therefore greater IMC formation and Cu consumption in the Sn3.5Ag/Cu reaction than in the Sn/Cu reaction under the same reflow conditions. (c) 2012 Elsevier Ltd. All rights reserved.
机构:
South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
South China Univ Technol, Guangdong Prov Engn R&D Ctr Elect Packaging Mat &, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Huang, J. Q.
Zhou, M. B.
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South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Zhou, M. B.
Zhang, X. P.
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South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
South China Univ Technol, Guangdong Prov Engn R&D Ctr Elect Packaging Mat &, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
机构:
South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
South China Univ Technol, Guangdong Prov Engn Technol R&D Ctr Elect Packagi, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Zhou, M. B.
Zhao, X. F.
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South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
South China Univ Technol, Guangdong Prov Engn Technol R&D Ctr Elect Packagi, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Zhao, X. F.
Yue, W.
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机构:
Lanzhou Inst Technol, Sch Mat Engn, Lanzhou 730050, Gansu, Peoples R ChinaSouth China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
Yue, W.
Zhang, X. P.
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South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
South China Univ Technol, Guangdong Prov Engn Technol R&D Ctr Elect Packagi, Guangzhou 510640, Guangdong, Peoples R ChinaSouth China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Guangdong, Peoples R China
机构:
Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USAArizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
Yazzie, K. E.
Williams, J. J.
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Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USAArizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
Williams, J. J.
Chawla, N.
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Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USAArizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
机构:
City Univ Hong Kong, Dept Elect Engn, EPA Ctr, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Elect Engn, EPA Ctr, Kowloon, Hong Kong, Peoples R China
Fouzder, Tama
Li, Qingqian
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City Univ Hong Kong, Dept Elect Engn, EPA Ctr, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Elect Engn, EPA Ctr, Kowloon, Hong Kong, Peoples R China
Li, Qingqian
Chan, Y. C.
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City Univ Hong Kong, Dept Elect Engn, EPA Ctr, Kowloon, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Elect Engn, EPA Ctr, Kowloon, Hong Kong, Peoples R China
Chan, Y. C.
Chan, Daniel K.
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Chartermate Elect Ltd, Kwai Chung, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Elect Engn, EPA Ctr, Kowloon, Hong Kong, Peoples R China