Interfacial reactions of eutectic Sn3.5Ag and pure tin solders with Cu substrates during liquid-state soldering
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作者:
Yang, Ming
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Shenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R ChinaShenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
Yang, Ming
[1
]
Li, Mingyu
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Shenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R ChinaShenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
Li, Mingyu
[1
,2
]
Wang, Chunqing
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Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R ChinaShenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
Wang, Chunqing
[2
]
机构:
[1] Shenzhen Univ Town Xili, Harbin Inst Technol, Shenzhen Grad Sch, Shenzhen 518055, Guangdong, Peoples R China
[2] Harbin Inst Technol, State Key Lab Adv Welding & Joining, Harbin 150001, Peoples R China
The growth behaviors of the intermetallic compounds (IMCs) formed at the eutectic Sn3.5Ag/polycrystalline Cu and pure Sn/polycrystalline Cu interfaces are comparatively studied based on an experiment in which the liquid solder is removed before the end of soldering. This removal of the solder allows for the capture and visualization of the interfacial IMCs formed during liquid-state soldering and avoids the influence of Cu6Sn5 precipitated from the solder matrix during cooling. The results show that round, scallop-type Cu6Sn5 grains with a strong texture form at the molten solder/Cu interface and that their growth is controlled more by grain boundary (GB) diffusion at the beginning of the reaction followed by volume diffusion, whereas the growth of Cu3Sn is only volume-diffusion-controlled. In addition, in contrast to the predictions of some studies, Ag does not inhibit interfacial IMC growth. Instead, by changing the interfacial energy between the molten solder and the interfacial IMC, the addition of Ag affects the growth orientation and coarsening behavior of interfacial Cu6Sn5 grains. These changes lead to more Cu6Sn5 GBs at the interface and therefore greater IMC formation and Cu consumption in the Sn3.5Ag/Cu reaction than in the Sn/Cu reaction under the same reflow conditions. (c) 2012 Elsevier Ltd. All rights reserved.
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Harbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R ChinaHarbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
Diao, He
Liu, Jiahao
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Harbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
China Elect Prod Reliabil & Environm Testing Res I, Guangzhou 511370, Peoples R ChinaHarbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
Liu, Jiahao
Zhong, Xiangxiang
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Harbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R ChinaHarbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
Zhong, Xiangxiang
Wang, Fengyi
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Harbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R ChinaHarbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
Wang, Fengyi
Qiu, Lijin
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Harbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R ChinaHarbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
Qiu, Lijin
Chen, Yini
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Harbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R ChinaHarbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
Chen, Yini
Chen, Hongtao
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Harbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
Harbin Inst Technol Shenzhen, Sauvage Lab Smart Mat, Shenzhen 518055, Peoples R ChinaHarbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
Chen, Hongtao
Guo, Xiaotong
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China Elect Prod Reliabil & Environm Testing Res I, Guangzhou 511370, Peoples R China
Chongqing CEPREI Ind Technol Res Inst Co Ltd, Chongqing 401332, Peoples R ChinaHarbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
Guo, Xiaotong
Li, Mingyu
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Harbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
Harbin Inst Technol Shenzhen, Sauvage Lab Smart Mat, Shenzhen 518055, Peoples R ChinaHarbin Inst Technol Shenzhen, Sch Intergrated Circuits, Shenzhen 518055, Peoples R China
机构:
Univ Tun Hussein Onn Malaysia, Fac Mech & Mfg Engn, Parit Raja 86400, Johor, MalaysiaUniv Tun Hussein Onn Malaysia, Fac Mech & Mfg Engn, Parit Raja 86400, Johor, Malaysia
Adawiyah, M. A. Rabiatul
Syafiq, H.
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Univ Tun Hussein Onn Malaysia, Fac Mech & Mfg Engn, Parit Raja 86400, Johor, MalaysiaUniv Tun Hussein Onn Malaysia, Fac Mech & Mfg Engn, Parit Raja 86400, Johor, Malaysia
Syafiq, H.
Ammar, M. D.
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Univ Tun Hussein Onn Malaysia, Fac Mech & Mfg Engn, Parit Raja 86400, Johor, MalaysiaUniv Tun Hussein Onn Malaysia, Fac Mech & Mfg Engn, Parit Raja 86400, Johor, Malaysia
Ammar, M. D.
Azlina, Saliza
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Univ Tun Hussein Onn Malaysia, Fac Mech & Mfg Engn, Parit Raja 86400, Johor, MalaysiaUniv Tun Hussein Onn Malaysia, Fac Mech & Mfg Engn, Parit Raja 86400, Johor, Malaysia
机构:
Dalian Univ Technol, Sch Mat Sci & Engn, Elect Packaging Mat Lab, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Mat Sci & Engn, Elect Packaging Mat Lab, Dalian 116024, Peoples R China
Huang, M. L.
Hou, X. L.
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Dalian Univ Technol, Sch Mat Sci & Engn, Elect Packaging Mat Lab, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Mat Sci & Engn, Elect Packaging Mat Lab, Dalian 116024, Peoples R China
Hou, X. L.
Kang, N.
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Dalian Univ Technol, Sch Mat Sci & Engn, Elect Packaging Mat Lab, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Mat Sci & Engn, Elect Packaging Mat Lab, Dalian 116024, Peoples R China
Kang, N.
Yang, Y. C.
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Dalian Univ Technol, Sch Mat Sci & Engn, Elect Packaging Mat Lab, Dalian 116024, Peoples R ChinaDalian Univ Technol, Sch Mat Sci & Engn, Elect Packaging Mat Lab, Dalian 116024, Peoples R China
机构:
City Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
Sharif, A
Chan, YC
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City Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
机构:
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
Wang, Dong-Liang
Yuan, Yuan
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China
Yuan, Yuan
Luo, Le
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Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Transducer Technol, Shanghai 200050, Peoples R China