Suppression of photocatalytic efficiency in highly N-doped anatase films

被引：104

作者：

Okato, T ^{[1
]}

Sakano, T ^{[1
]}

Obara, M ^{[1
]}

机构：

[1] Keio Univ, Dept Elect & Elect Engn, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

来源：

PHYSICAL REVIEW B | 2005年 / 72卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.72.115124

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the role of N in epitaxial films of anatase TiO2. The films were artificially grown with a two-step temperature-tuned epitaxy which utilized the high-temperature cubic phase of LaAlO3 substrates. The preparation of highly crystallized anatase with various N concentrations (C-N <= 3.85 at. %) allowed us to identify the optimum dopant concentration (C-N=1-2 at. %). At higher doping levels, N is found to be difficult to substitute for O having been predicted to contribute to the band-gap narrowing, giving rise to the undesirable deep-level defects. In addition, a study by x-ray and Raman spectroscopy revealed that the growth of anatase became more difficult, and the stable phase was shifted to rutile at the higher N concentrations.

引用

页数：6

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