On the 1/f noise in 0.15 μm fully depleted SOI/MOS transistors

被引：1
作者：
Haendler, S.
Jomaah, J.
Balestra, F.
机构：
[1] ENSERG, IMEP, UMR CNRS, F-38016 Grenoble 1, France
[2] ENSERG, IMEP, INPG, F-38016 Grenoble 1, France
来源：
FLUCTUATION AND NOISE LETTERS | 2002年 / 2卷 / 03期
关键词：
SOI/MOSFET; fully depleted; low-frequency noise; kink related excess noise;
D O I：
10.1142/S0219477502000828
中图分类号：
O1 [数学];
学科分类号：
0701 ; 070101 ;
摘要：
The low frequency noise (LFN) behavior in 0.15 mu m N-channel fully depleted SOI/MOS transistors is investigated, both in ohmic and saturation regimes. The extraction of the interface trap density is also carried out. Moreover, the existence of a moderate kink effect and its influence on LF noise in fully depleted devices are shown.
引用
收藏
页码：L253 / L256
页数：4
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