Resonant tunneling in GaAs/AlGaAs quantum well system for solar photovoltaics

被引:4
|
作者
Klemmer, P. S. [1 ,2 ]
Mityagin, Yu A. [1 ]
Telenkov, M. P. [1 ]
Nagaraja, K. K. [2 ,3 ]
Elantsev, D. A. [1 ]
Amiri, Sh [1 ,2 ]
机构
[1] Russian Acad Sci, PN Lebedev Phys Inst, 53 Leninskiy Prospekt, Moscow 119991, Russia
[2] Natl Univ Sci & Technol MISiS, 4 Leninskiy Prospekt, Moscow 119049, Russia
[3] Manipal Acad Higher Educ, Manipal Inst Technol, Dept Phys, Manipal 576104, Karnataka, India
关键词
Resonant tunneling; Photovoltaics; Quantum wells; GaAs/AlGaAs; CELLS;
D O I
10.1016/j.spmi.2020.106472
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this paper, we propose a simple and effective method to vary the lowest subband position in a quantum well system. A nearly continuous variation - from the bottom of the quantum well up to a continuous spectrum - can be achieved by inserting a series of thin barriers of host material into a quantum well of fixed width. This technique is technologically simple and promising in a variety of applications, in particular, for aligning the lowest subband position in the sequence of quantum wells in an electric field of an arbitrary configuration, including those typical for p-i-n solar cells.
引用
收藏
页数:6
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