InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy

被引：13

作者：

Kiravittaya, S ^{[1
]}

Songmuang, R ^{[1
]}

Changmuang, P ^{[1
]}

Sopitpan, S ^{[1
]}

Ratanathammaphan, S ^{[1
]}

Sawadsaringkarn, M ^{[1
]}

Panyakeow, S ^{[1
]}

机构：

[1] Chulalongkorn Univ, Fac Engn, Dept Elect Engn, Semicond Device Res Lab, Bangkok 10330, Thailand

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

low dimensional structures; nanostructures; surface structure; molecular beam epitaxy; selective epitaxy;

D O I：

10.1016/S0022-0248(01)00978-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-organized InAs QDs formation on (4 1 1)A GaAs and on controlled (1 0 0) GnAs substrates were studied by in-situ RHEED observation, AFM measurement and PL spectroscopy. The transition from two-dimensional to three-dimensional growth on (4 1 1)A was observed by RHEED pattern transformation to indicate the critical layer thickness of InAs QDs formation. The result is almost the same as that on (1 0 0). Improvement of QDs alignment having dot size uniformity on (4 1 1)A, was observed by AFM measurement. Enhanced optical properties of QDs on (4 1 1)A was shown by low-temperature PL spectroscopy. Strong PL peak at 966 nm having FWHM of 35 nm was obtained from the 3-stacked QDs on (4 1 1)A. The narrower PL FWHM of QDs peak. on (4 1 1)A comes from the improved uniformity of QDs on (411)A. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：1010 / 1015

页数：6

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