Experimental verification of vacancy defects and their vital role on reddish Bi4Ge3O12 single crystals

被引：4

作者：

Yuan, Lanying ^{[1
,2
]}

Ni, Haihong ^{[1
]}

Chen, Junfeng ^{[1
]}

Qi, Xuejun ^{[1
]}

Li, Xiang ^{[1
]}

Karaki, Tomoaki ^{[2
]}

Wang, Dong ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China

[2] Toyama Prefectural Univ, Fac Engn, Toyama 9390398, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / SB期

基金：

美国国家科学基金会;

关键词：

Bismuth germanate; single crystals; reddish BGO; vacancy defects; LIQUID BOUNDARY-LAYER; PHOTOCATALYTIC PERFORMANCE; COLOR-CENTER; GROWTH; OXIDE; TRANSMISSION; ENHANCEMENT; GLASSES; ORIGIN;

D O I：

10.35848/1347-4065/ac2a90

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reddish bismuth germanate (Bi4Ge3O12, BGO) crystals are found during the industrial large-size and -scale crystal growth by Bridgman method, which directly causes visible absorption. The reddish can be eliminated by a modified oxygen-annealing. Oxygen vacancy is further confirmed through electron paramagnetic resonance, X-ray photoelectron spectroscopy, Raman spectroscopy to demonstrate the existence of vacancy defects and elucidate the nature and role. Bi vacancy in reddish BGO single crystals is verified via scanning transmission electron microscopy, energy-dispersive spectroscopy, and high-angle annular dark-field scanning TEM. The essence of annealing and vacancy evolution is also discussed.

引用

页数：6

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