High-power on-chip microrefrigerator based on a normal-metal/insulator/superconductor tunnel junction

被引：42

作者：

Fisher, PA ^{[1
]}

Ullom, JN ^{[1
]}

Nahum, M ^{[1
]}

机构：

[1] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 18期

关键词：

D O I：

10.1063/1.123943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present measurements and theoretical modeling of two normal/insulator/superconductor tunnel junction microrefrigerators. The first device, fabricated on a thick silicon substrate, had a cooling power of 36 pW, an active volume of 350 mu m(3), and a temperature drop for electrons of 2 mK from a 300 mK bath. The second device, fabricated on a thin silicon nitride membrane, had a cooling power of 4 pW and cooled both electrons and phonons in a similar volume by almost 2 mK from a bath of 300 mK. These are the largest cooling powers and active volumes for electron and phonon refrigeration reported to date. (C) 1999 American Institute of Physics. [S0003-6951(99)04818-4].

引用

页码：2705 / 2707

页数：3

共 13 条

[1]

ANDREEV AF, 1964, SOV PHYS JETP-USSR, V19, P1228

[2] DESIGN OF A NOVEL ON-CHIP ELECTRONIC REFRIGERATOR BASED ON A NORMAL-INSULATOR-SUPERCONDUCTOR TUNNEL JUNCTION [J].