Role of copper in time dependent dielectric breakdown of porous organo-silicate glass low-k materials

被引：35

作者：

Zhao, Larry ^{[1
,2
]}

Pantouvaki, Marianna ^{[1
]}

Croes, Kristof ^{[1
]}

Tokei, Zsolt ^{[1
]}

Barbarin, Yohan ^{[1
]}

Wilson, Christopher J. ^{[1
]}

Baklanov, Mikhail R. ^{[1
]}

Beyer, Gerald P. ^{[1
]}

Claeys, Cor ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 22期

关键词：

capacitors; copper; electric breakdown; glass; low-k dielectric thin films; MIM devices; organic compounds; porous materials; tantalum; tantalum compounds; INTERCONNECT DIELECTRICS; MODEL; DRIFT;

D O I：

10.1063/1.3664405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of copper in time dependent dielectric breakdown (TDDB) of a porous low-k dielectric with TaN/Ta barrier was investigated on a metal-insulator-metal capacitor configuration where Cu ions can drift into the low-k film by applying a positive potential on the top while they are not permitted to enter the low-k dielectric if a negative potential is applied on the top. No difference in TDDB performance was observed between the positive and negative bias conditions, suggesting that Cu cannot penetrate TaN/Ta barrier to play a critical role in the TDDB of porous low-k material. (C) 2011 American Institute of Physics. [doi:10.1063/1.3664405]

引用

页数：3

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