Band-Gap Tuning in Ferroelectric Bi2FeCrO6 Double Perovskite Thin Films

被引:41
作者
Quattropani, A. [1 ,2 ]
Stoeffler, D. [3 ]
Fix, T. [1 ,2 ]
Schmerber, G. [3 ]
Lenertz, M. [3 ]
Versini, G. [3 ]
Rehspringer, J. L. [3 ]
Slaoui, A. [1 ,2 ]
Dinia, A. [3 ]
Cois, S. [3 ]
机构
[1] Univ Strasbourg, ICube Lab, 23 Rue Loess,BP 20 CR, F-67037 Strasbourg 2, France
[2] CNRS, 23 Rue Loess,BP 20 CR, F-67037 Strasbourg 2, France
[3] Univ Strasbourg, CNRS, Inst Phys & Chim Mat Strasbourg, UMR 7504, 23 Rue Loess,BP 43, F-67034 Strasbourg 2, France
关键词
ZNO FILMS; OPTICAL-PROPERTIES; SPUTTERED ZNO; SOLAR-CELLS; AB-INITIO; OXIDE; POLARIZATION;
D O I
10.1021/acs.jpcc.7b10622
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report in this work on the variation of the optical band gap and structural properties of epitaxial 25 Bi2FeCrO6 films grown by pulsed laser deposition on SrTiO3(001) substrates. It is shown that the band gap can be tuned by varying the laser repetition rate during deposition which has a strong impact on the Fe/Cr order inside the Bi2FeCrO6 double perovskite structure. Ab initio band structure calculations unambiguously show that the presence of antisite defects leads to an increase of the gap of about 0.25 eV with respect to the one calculated in the ideal structure. It is also shown that with increasing Fe/Cr disorder the saturation magnetization is strongly reduced along,with the difference between the Fe and Cr valences. These results suggest that the band gap of Bi2FeCrO6 can effectively be engineered by modulating the deposition conditions, thus paving the way for applications such as photovoltaic conversion, memory writing, and direct CMOS integration.
引用
收藏
页码:1070 / 1077
页数:8
相关论文
共 50 条
  • [31] Band-Gap Tuning of Organic Inorganic Hybrid Palladium Perovskite Materials for a Near-Infrared Optoelectronics Response
    Zhou, Huawei
    Cui, Xiaolei
    Yuan, Cang
    Cui, Jiawen
    Shi, Shaozhen
    He, Guohang
    Wang, Yunying
    Wei, Jiazhen
    Pu, Xipeng
    Li, Wenzhi
    Zhang, Dafeng
    Wang, Jie
    Ren, Xiaozhen
    Ma, Huiyan
    Shao, Xin
    Wei, Xinting
    Zhao, Jinsheng
    Zhang, Xianxi
    Yin, Jie
    ACS OMEGA, 2018, 3 (10): : 13960 - 13966
  • [32] Structural properties and polarization switching of epitaxial Bi2FeCrO6 thin films grown on La2/3Sr1/3MnO3/SrTiO3 (111) substrates
    Wendling L.
    Henning X.
    Roulland F.
    Lenertz M.
    Versini G.
    Schlur L.
    Chung U.
    Dinia A.
    Colis S.
    Rastei M.V.
    Thin Solid Films, 2022, 757
  • [33] Strain-controlled oxygen vacancy for robust ferroelectric BiSmFe2O6-<bold>δ</bold> double-perovskite epitaxial thin films
    Tu, Jie
    Fang, Yue-Wen
    Lu, Yue
    Li, Hangren
    Xi, Guoqiang
    Ding, Jiaqi
    Liu, Xudong
    Liu, Xiuqiao
    Yang, Qianqian
    Tian, Jianjun
    Zhang, Linxing
    APPLIED PHYSICS REVIEWS, 2024, 11 (01)
  • [34] Tuning the band gap of Cu(In,Ga)Se2 thin films by simultaneous selenization/sulfurization
    Huang, Yongliang
    Han, Anjun
    Wang, Xian
    Liu, Xiaohui
    Liu, Zhengxin
    Meng, Fanying
    MATERIALS LETTERS, 2016, 182 : 114 - 117
  • [35] Tuning of the open-circuit voltage by wide band-gap absorber and doped layers in thin film silicon solar cells
    Wang, Shuo
    Smirnov, Vladimir
    Chen, Tao
    Zhang, Xiaodan
    Xiong, Shaozhen
    Zhao, Ying
    Finger, Friedhelm
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2015, 9 (08): : 453 - 456
  • [36] Analytical model for the photocurrent of solar cells based on graded band-gap CdZnTe thin films
    Morales-Acevedo, Arturo
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (10) : 2837 - 2841
  • [37] Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films
    Buchholz, D. B.
    Proffit, D. E.
    Wisser, M. D.
    Mason, T. O.
    Chang, R. P. H.
    PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL, 2012, 22 (01) : 1 - 6
  • [38] Electrical and band-gap properties of amorphous zinc-indium-tin oxide thin films
    D.B. Buchholz
    D.E. Proffit
    M.D. Wisser
    T.O. Mason
    R.P.H. Chang
    Progress in Natural Science:Materials International, 2012, 22 (01) : 1 - 6
  • [39] Photo-induced negative differential resistance and carrier-transport mechanisms in Bi2FeCrO6 resistive switching memory devices
    Hu, Songcheng
    Tang, Zhenhua
    Zhang, Li
    Yao, Dijie
    Liu, Zhigang
    Zeng, Siming
    Guo, Xiaobin
    Jiang, Yanping
    Tang, Xin-Gui
    Ma, Lin
    Nie, Zhaogang
    Gao, Ju
    JOURNAL OF MATERIALS CHEMISTRY C, 2021, 9 (39) : 13755 - 13760
  • [40] Investigation of the structural and optical characteristics of La2FeCrO6 double perovskite for optoelectronic applications
    Lemziouka A.
    Nekkach F.
    Lemziouka H.
    Moubah R.
    Boutahar A.
    El Yazidi M.
    Lamiae M.
    Journal of Molecular Structure, 2024, 1316