Band-Gap Tuning in Ferroelectric Bi2FeCrO6 Double Perovskite Thin Films

被引:41
|
作者
Quattropani, A. [1 ,2 ]
Stoeffler, D. [3 ]
Fix, T. [1 ,2 ]
Schmerber, G. [3 ]
Lenertz, M. [3 ]
Versini, G. [3 ]
Rehspringer, J. L. [3 ]
Slaoui, A. [1 ,2 ]
Dinia, A. [3 ]
Cois, S. [3 ]
机构
[1] Univ Strasbourg, ICube Lab, 23 Rue Loess,BP 20 CR, F-67037 Strasbourg 2, France
[2] CNRS, 23 Rue Loess,BP 20 CR, F-67037 Strasbourg 2, France
[3] Univ Strasbourg, CNRS, Inst Phys & Chim Mat Strasbourg, UMR 7504, 23 Rue Loess,BP 43, F-67034 Strasbourg 2, France
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2018年 / 122卷 / 02期
关键词
ZNO FILMS; OPTICAL-PROPERTIES; SPUTTERED ZNO; SOLAR-CELLS; AB-INITIO; OXIDE; POLARIZATION;
D O I
10.1021/acs.jpcc.7b10622
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report in this work on the variation of the optical band gap and structural properties of epitaxial 25 Bi2FeCrO6 films grown by pulsed laser deposition on SrTiO3(001) substrates. It is shown that the band gap can be tuned by varying the laser repetition rate during deposition which has a strong impact on the Fe/Cr order inside the Bi2FeCrO6 double perovskite structure. Ab initio band structure calculations unambiguously show that the presence of antisite defects leads to an increase of the gap of about 0.25 eV with respect to the one calculated in the ideal structure. It is also shown that with increasing Fe/Cr disorder the saturation magnetization is strongly reduced along,with the difference between the Fe and Cr valences. These results suggest that the band gap of Bi2FeCrO6 can effectively be engineered by modulating the deposition conditions, thus paving the way for applications such as photovoltaic conversion, memory writing, and direct CMOS integration.
引用
收藏
页码:1070 / 1077
页数:8
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