Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process

被引：15

作者：

Fu, Yi-Keng ^{[1
]}

Chen, Bo-Chun ^{[2
]}

Fang, Yen-Hsiang ^{[3
]}

Jiang, Ren-Hao ^{[4
]}

Lu, Yu-Hsuan ^{[5
]}

Xuan, Rong ^{[2
]}

Huang, Kai-Feng ^{[2
]}

Lin, Chia-Feng ^{[4
]}

Su, Yan-Kuin ^{[6
]}

Chen, Jebb-Fang ^{[2
]}

Chang, Chun-Yen ^{[7
]}

机构：

[1] Ind Technol Res Inst, Optoelect Epitaxy & Device Dept, Hsinchu 31040, Taiwan

[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[3] Ind Technol Res Inst, Elect & Optoelect Res Lab, Hsinchu 31040, Taiwan

[4] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 402, Taiwan

[5] Natl Cheng Kung Univ, Inst Microelect, Tainan 701, Taiwan

[6] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

[7] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2011年 / 23卷 / 19期

关键词：

Chemical wet-etching; GaN; light extraction; near-ultraviolet (NUV) light-emitting diode (LED); SURFACE; EFFICIENCY;

D O I：

10.1109/LPT.2011.2161276

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate were fabricated through a chemical wet-etching process to increase light-extraction efficiency. The stable crystallographic etching planes were formed as the GaN {10 (11) over bar} planes. When the near-ultraviolet and blue LED were operated as a forward current of 20 mA, the output power of LEDs was improved from 13.2 and 19.9 mW to 25.6 and 24.0 mW, respectively. The different enhanced ratio is attributed to the different transmittance as a function of wavelength is caused from hexagonal pyramid on N-face GaN substrate after wet-etching process.

引用

页码：1373 / 1375

页数：3

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