Modeling ZnS and ZnO Nanostructures: Structural, Electronic, and Optical Properties

被引:55
作者
Azpiroz, Jon M. [1 ,2 ,3 ]
Mosconi, Edoardo [1 ]
De Angelis, Filippo [1 ]
机构
[1] Univ Perugia, Dipartimento Chim, Ist CNR Sci & Tecnol Mol ISTM CNR, I-06213 Perugia, Italy
[2] Euskal Herriko Unibertsitatea, Kimika Fak, Donostia San Sebastian, Euskadi, Spain
[3] DIPC, Donostia San Sebastian, Euskadi, Spain
关键词
LOW-TEMPERATURE SYNTHESIS; MOLECULAR-DYNAMICS; PHOTOLUMINESCENCE PROPERTIES; NANOPARTICLES; PHOTOEMISSION; PHASE; STABILITY; SINGLE; SIZE; CDS;
D O I
10.1021/jp2083709
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report the computational modeling of ZnS and ZnO nanostructures by defining realistic nanoparticle models similar to 1.5 nm sized for each material and investigating their structural, electronic, and optical properties by means of DFT/TDDFT calculations. To provide a direct comparison of calculated data to experimentally characterized nanoparticles, 3D (ZnX)(111) nanoclusters of prismatic shape have been set up starting from the bulk wurtzite (X = O, S), with two different saturation patterns of the polar surfaces. The investigated models have been optimized by means of Car-Parrinello molecular dynamics and local geometry optimization techniques. The investigated systems exhibit a well-opened HOMO-LUMO energy gap, without any artificial intraband-gap states. TDDFT calculation of the lowest excitation energies are in excellent agreement, within 0.1-0.2 eV, with the experimental absorption onsets reported for similarly sized ZnO and ZnS nanoparticles (3.70 and 4.40 eV, respectively). We have also investigated the electronic structure of the considered nanoparticles, with reference to the valence band structure, finding calculated binding energies for the Zn d-shell to be only slightly displaced toward lower values compared to experimental values, possibly due to quantum confinement effects. This work provides the required computational framework for modeling ZnX and in general II-VI semiconductor nanomaterials, opening the way to simulation of ligand/semiconductor interactions.
引用
收藏
页码:25219 / 25226
页数:8
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